Firstack Presents A Variety of New Products at the 3rd EESA Exhibition
2024-09-05

The 3rd EESA Exhibition was held in Shanghai from September 2nd to 4th. Firstack Technology Co., Ltd. presented a new generation of ASIC-based IGBT drivers, SiC series products and water-cooled power stack. With the theme of "One-Stop SiC Solution for Energy Storage System", Firstack comprehensively demonstrated its innovations in the field of power semiconductors to help power storage systems to improve power density, reliability and efficiency.


During the exhibition, Firstack particularly emphasized the reliability and flexibility of the products. The isolated DC/DC power supply can provide the IGBT and MOSFET driving circuits with safe and reliable isolated power supply. The new generation of driver products based on ASIC, such as SiC multi-parallel driver solution, with multiple configurable parameters, integrate the magnetic isolation modulation technology, single-channel multi-state isolation transmission technology and intelligent fault management technology on the basis of short-circuit protection, active clamping and other functions, which guarantees the reliability and flexibly, and can adapt to various applications. SiC PCS power stack solution features low stray inductance and high power density, which provides a high-efficiency solution for the power conversion system. The expandable 3-phase water-cooled power stack adopts efficient heat dissipation technology, which can reduce the system operating temperature, extend the service life of the equipment, and is suitable for energy storage converter, wind energy converter and other high-power density applications.

With the success of the EESA exhibition, Firstack once again proved its innovative strength and profound technical accumulation in the field of power semiconductors. In the future, Firstack will uphold the belief of "The journey is long and the way is blocked, but with perseverance, the goal will surely be reached", and drive the continuous development of power semiconductor and ESS with technological innovation.