2FHC06M33XX• Supports up to 3300V SiC-module
• Digital control method
• Propogation-delay of paralleling gate signal ≤ 5ns
• Isolated NTC sampling
• Short-circuit protection (soft shut down)
• Miller clamp
• Intelligent fault management
| Product | Max Breakdown Voltage | Numbers of channels | Comformal coated | Driving Mode | Gate Peak Current（Max） | Gate Turn-off Voltage | Interface Type | Protection Features | Logic Input Voltage | Max Switching Frequecy | Gate Turn-on Voltage | Supported Module Type | Supported Topologies | Power-Ouput/Channels(Max) | Paralleling Supported | Supply Voltage(Typ) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 2FHC06M33XX | 3300V | 2 | Optional | Direct/Half-bridge | / | -10V~-2V | Electrical | Soft shut down Undervoltage Miller clamp Isolate NTC sampling Intelligent fault management | 15V | 100kHz | 15~20V | SiC | 2-level | 6W | 1~4 | 15V or 24V |
Product Information
Product Details
The 2FHC06M33XX gate driver core is designed for 3300V Linpak/XHP-2/LV100 SiC MOSFET with 15~20V positive gate voltage and -2~-10V negative gate voltage in on-state.
The 2FHC06M33XX features dual-channel with electrical interfaces, and supports 2-level topologies.
The 2FHC06M33XX is a high-performance, dual-channel SiC/IGBT gate driver core developed based on Firstack intelligent chip technology, and can flexibly match 1~4 SiC/IGBT modules. The overall architecture consists of a MCC (main control core) and multiple MAB (module adaptor board) units, the MCC and MAB are connected by a set of cables.
Compact and Highly Integrated
Gate driver core for Linpak/XHP-2/LV100 SiC MOSFET
Dual-channel gate driver core
15~20V positive gate voltage
-2~-10V negative gate voltage
6W output power per channel at maximum ambient temperature
Electrical interface
-40°C to 85°C operating ambient temperature
Isolate NTC sampling
Protection
Short-circuit protection (soft shut down)
Undervoltage protection
Miller clamp
Intelligent fault management